Apparatus for silicon web growth of higher output and improved g

Details Apparatus for silicon web growth of higher output and improved g Apparatus for silicon web growth of higher output and improved g

1987-09-02

1989-05-09

Stoll, Robert L.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

C30B 2702

Patent

active

048288080

ABSTRACT:
This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.

REFERENCES:
patent: 3162507 (1964-12-01), Dematis et al.
patent: 4389377 (1983-06-01), Duncan et al.
Seidensticker and Hopkins, "Silicon Ribbon Growth by the Dendritic Web Process", Journal of Crystal Growth 50 (1980) 221-235.
Barrett, Meyers, Hamilton and Bennett, "Growth of Wide, Flat Crystals of Silicon Web", Journal of the Electrotechnical Society (1971), 952-57.
Seidensticker, "Dendritic Web Growth of Silicon", Crystals 8, 146-172 (1982).

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