Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-30
2005-08-30
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S730000, C204S298070, C204S298150, C204S298310
Reexamination Certificate
active
06936546
ABSTRACT:
An apparatus for shaping and encapsulating near edge regions of a semiconductor wafer is described. A housing of the apparatus has a slot for receiving an edge of a wafer affixed on a rotatable chuck. At least one plasma source connected to the housing generates a flow of reactive gas towards the edge of the wafer. A channel in the housing directs a flow of diluent/quenching gas onto the wafer in close proximity to an exhaust channel for exhausting of the diluent/quenching gas and the reactive gas away from the wafer. The apparatus may also provide a plurality of plasma sources, for example, plasma sources for selectively etching of a polymer on the wafer, etching of silcon dioxide on the wafer and depositing an encapsulating silicon dioxide layer on the wafer.
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ISA/US International Search Report dated Sep. 23, 2003 regarding International Application No. PCT/US03/12615.
Accretech USA, Inc.
Harness Dickey & Pierce PLC
Lee Hsien-Ming
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