Coating processes – Solid particles or fibers applied – Roofing produced
Patent
1991-03-14
1993-07-20
Walsh, Donald P.
Coating processes
Solid particles or fibers applied
Roofing produced
4221863, 118620, 118717, 20415744, 20415762, B01J 1912, B05D 306
Patent
active
052290816
ABSTRACT:
An apparatus for use in semiconductor fabrication that includes use of a photo-excitation process and is provided with a revolving gas chamber for forming spiral vortices flow of purge gas located at the upper or side part of a gas reaction chamber, an internal or external light source, a partition having a centrally located circular opening provided between the revolving gas chamber and the gas reaction chamber, or without the partition when the revolving gas chamber is made smaller than the gas reaction chamber. The revolving gas chamber has a multiplicity of gas inlets oriented at an angle with respect to the center of the revolving gas chamber to produce a gas flow in one direction to form spiral vortices that revolves and thereby prevents the light source or light transmitting window from becoming contaminated by process reactions.
REFERENCES:
patent: 3490961 (1970-01-01), Frieser et al.
patent: 4012301 (1977-03-01), Rich et al.
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4371587 (1983-02-01), Peters
patent: 4435445 (1984-03-01), Allred et al.
patent: 4474829 (1985-10-01), Peters
patent: 4558017 (1985-12-01), Gupta et al.
patent: 4654226 (1987-03-01), Jackson et al.
patent: 4695331 (1987-09-01), Ramaprasad
patent: 4702808 (1987-10-01), Lemelson
patent: 4753716 (1988-06-01), Beatty et al.
patent: 4766091 (1988-08-01), Ohtoshi et al.
Delineated Cadmium Films produced by the Photolysis of Cadmium Dimethyl by M. W. Jones et al., Nature, Oct. 8, p. 177, 1966.
Epitaxial Growth with Light Irradiation by M. Kumagawa et al., Japanese Journal of Applied Physics, vol. 7, No. 11, pp. 1332-1341, 1968.
Low-Temperature Silicon Epitaxy, R. G. Freiser, Journal of Electrochemical Society, vol. 115, No. 4, pp. 401-405, 1968.
Journal of Applied Physics, Y. Kata et al., vol. 62, Nov. 1, 1987, No. 9.
Journal of Applied Physics, T. Suda et al., Mar. 15, 1992, vol. 71, No. 6.
Kamisako et al. 1984. Analysis of Deposition Rate Distribution in the Photo-CVD of a-Si by a Unified Reactor with a Lamp Japanese Journal of Applied Physics. 23(10):776-778.
Langford et al. 1987. Maintaining Window Transparency in Photo-CVD: A Simultaneous Etch/Deposition Method. Proc. 19th EEE Photovoltaic Conf. pp. 573, 575-576.
Ando et al. 1985. Photoenhanced metalorganic chemical vapor deposition of ZnSe films using Diethylzin & dimethylselemide. J. Appl. Phys. 58(2): 802-805.
Inoue et al. 1983. Photochemical Vapor Deposition of undoped & n-type amorphous silicon films produced from disilane. Appl. Phys. Lett. 43(8):774-775.
Zarnani et al. 1986. Optical properties of UV laser photolytic deposition of hydrogenated amorphous silicon. J. Appl. Phys. 60 (7):2523-2529.
Jasinoki et al. 1982. Excessive laser-induced deposition of silicon nitride thin films. J. Appl. Phys. 61(1):431 & 433.
Kazahaya et al. Valency Control in Photochemically-Deposited a-Si: H from Si.sub.2 H.sub.6, Tech. Dig. of Int. PUSEC-1, Kobe, Japan. pp. 449-452.
Yoshikawa et al. 1984. Growth of hydrogenated amorphous silicon films by ArF Excessive Laser Photodissociation of Disilane. Jap. J. of Appl. Phys. 23(2):L91--L93.
Sugawara et al. 1979. Effects of radiation profile and internal light filtering by a product on the reaction characteristics in plate type photo reactors. Dept. of Fuel Energy, Akita University, Akita. vol. 12(2):143-147.
Saitoh et al. 1983. Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition. Appl. Phys. Lett. 42(8); 678-679.
Rocheleau et al. 1986. Properties of a-Si:H and a-SiGe:H films deposited by photo-assisted CVD. Mat. Res. Soc. Symp. Proc. vol. 70. pp. 37-42.
Numasawa et al. 1986. Photo CVD system for silicon nitride film. Journal of Electronic Materials. 15(10:27-30.
Tadaki. 1968. Fluid dynamics reaction characteristics of fluid in viscuous flow between parallel plates. Part II. Analysis of the reaction characteristics by a photochemical reaction. Dept. of Chem. Eng. Tohaku University, Sendai, Japan. pp. 453-465.
Jenkins Daniel
Regal Joint Co., Ltd.
Walsh Donald P.
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