Apparatus for semiconductor laser

Details Apparatus for semiconductor laser Apparatus for semiconductor laser

1993-05-18

1994-12-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 93, 257 99, 257627, 372 50, H01L 3300

Patent

active

053731735

ABSTRACT:
A light emitting element having a semiconductor substrate having {100} crystal surface as a major surface, a light emitting element formed on the semiconductor substrate, a growth blocking layer formed on a resonator end face of the light emitting element, a regrown layer formed on the light emitting element, a reflection mirror opposed to the resonator end face, a first electrode in contact with said semiconductor substrate, and a second electrode formed on the regrown layer, in which the regrown layer is made of the same material as that of the reflection mirror and the reflection mirror is formed of a semiconductor formed of {110} crystal surface epitaxially grown.

REFERENCES:
patent: 4719635 (1988-01-01), Yeh
patent: 4881237 (1989-11-01), Donnelly
patent: 5012477 (1991-04-01), Mesquida et al.

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