Apparatus for reducing mirror in a solid state imaging device wh

Details Apparatus for reducing mirror in a solid state imaging device wh Apparatus for reducing mirror in a solid state imaging device wh

1993-01-21

1994-08-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257230, 257435, 257445, 377 63, H01L 2978, H01L 2714, G11C 1928

Patent

active

053430603

ABSTRACT:
The present invention is directed to a solid state imaging deice in which a light sensing region (3), a vertical register (4) and a channel stopper region (5) are formed within a well region (2) on an N-type silicon substrate (1). A positive electric charge storage region (6) is formed on the surface of the light sensing region (3) and a well region (7) is formed beneath the vertical register (4), respectively. Further, a transfer electrode (9) is selectively formed on the vertical register (4) through a gate insulating layer (8) and an Al light-intercepting layer (11) is formed on the transfer electrode (9) through an interlevel insulator (10). A surface protecting layer (12) is formed on the whole surface including the Al light-intercepting layer (11). In this solid state imaging device, a tapered portion (11a) is formed on the Al light-intercepting layer 11 corresponding to a peripheral edge portion of the light sensing region 3. An oblique light component in an incident light and a reflected light component are suppressed from being introduced into the vertical register (4) to thereby reduce a smear.

REFERENCES:
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4914493 (1990-04-01), Shiromizu

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