Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1997-08-07
1999-02-09
Garrett-Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 18, 117202, 117214, C30B 3500
Patent
active
058688358
ABSTRACT:
A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.
REFERENCES:
patent: 5492078 (1996-02-01), Alterkruger et al.
Harada Isamu
Nagai Naoki
Oda Michiaki
Ohtsuka Seiichiro
Garrett-Hiteshew Felisa
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Apparatus for recharging of silicon granules in a czochralski si does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for recharging of silicon granules in a czochralski si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for recharging of silicon granules in a czochralski si will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1945690