Apparatus for reacting a semiconductor wafer with steam

Details Apparatus for reacting a semiconductor wafer with steam Apparatus for reacting a semiconductor wafer with steam

1983-10-26

1985-10-15

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, 118726, 427 93, C23C 1308

Patent

active

045467269

ABSTRACT:
An apparatus for reacting a semiconductor wafer with steam includes a reaction tube and a heater for heating the reaction tube. The reaction tube is divided into three chambers by partition plates having a through hole. Pure water is directly supplied into the most upstream chamber and is evaporated into steam. The steam enters the second chamber and further heated therein into superheated steam. The superheated steam enters the most downstream chamber in which a semiconductor wafer or wafers are placed, and is heated sufficient for reaction with the wafer to form an oxide film thereon.

REFERENCES:
patent: 3441000 (1969-04-01), Burd et al.
patent: 3517643 (1970-06-01), Goldstein et al.
patent: 3661117 (1972-05-01), Cornelius et al.
patent: 4018184 (1977-04-01), Nagasawa et al.
patent: 4167915 (1979-09-01), Toole et al.
patent: 4232063 (1980-11-01), Rosler et al.
patent: 4253417 (1981-03-01), Valentijn
patent: 4293590 (1981-10-01), Takagi et al.
patent: 4315479 (1982-02-01), Toole et al.

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