Apparatus for rapid thermal processing of a wafer

Details Apparatus for rapid thermal processing of a wafer Apparatus for rapid thermal processing of a wafer

1997-10-21

1999-04-13

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118666, 118712, 118713, C23C 1600

Patent

active

058939520

ABSTRACT:
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.

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