Apparatus for pulling single crystal by CZ method

Details Apparatus for pulling single crystal by CZ method Apparatus for pulling single crystal by CZ method

2007-05-31

2010-06-01

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S208000, C117S218000, C117S222000, C117S217000

Reexamination Certificate

active

07727334

ABSTRACT:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

REFERENCES:
patent: 5853480 (1998-12-01), Kubota et al.
patent: 5865887 (1999-02-01), Wijaranakula et al.
patent: 5885347 (1999-03-01), Tomioka et al.
patent: 5900059 (1999-05-01), Shimanuki et al.
patent: 5997635 (1999-12-01), Kubota et al.
patent: 6036776 (2000-03-01), Kotooka et al.
patent: 6090198 (2000-07-01), Aydelott
patent: 6117402 (2000-09-01), Kotooka et al.
patent: 6190452 (2001-02-01), Sakurada et al.
patent: 6299982 (2001-10-01), Tamatsuka et al.
patent: 6364947 (2002-04-01), Iida et al.
patent: 6632280 (2003-10-01), Hoshi et al.
patent: 6702892 (2004-03-01), Okui et al.
patent: 6733585 (2004-05-01), Inagaki et al.
patent: 6767400 (2004-07-01), Kubo et al.
patent: 6858076 (2005-02-01), Nakajima et al.
patent: 6977010 (2005-12-01), Ebi et al.
patent: 7244309 (2007-07-01), Ebi et al.
patent: 56-45889 (1981-04-01), None
patent: 58-217493 (1983-12-01), None
patent: 3-80338 (1991-12-01), None
patent: 4-317491 (1992-11-01), None
patent: 8-239291 (1996-09-01), None
patent: 10-098047 (1998-04-01), None
patent: 10-208987 (1998-08-01), None
patent: 11-092272 (1999-04-01), None
patent: 11-189488 (1999-07-01), None
patent: 2000-154095 (2000-06-01), None
patent: 2000-264779 (2000-09-01), None
Dash; “Growth of Silicon Crystals Free from Dislocations,”Journal of Applied Physics, vol. 30 (4), Apr. 1999, pp. 459-474.
Office Action for related U.S. Appl. No. 11/981,476.
Office Action for related U.S. Appl. No. 12/317,695.

Affiliated with

Also associated with

Rating

Apparatus for pulling single crystal by CZ method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for pulling single crystal by CZ method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for pulling single crystal by CZ method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4179365