Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2005-12-20
2005-12-20
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S218000, C117S911000
Reexamination Certificate
active
06977010
ABSTRACT:
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
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William C. Dash. “Growth of Silicon Crystals Free from Dislocations”, Apr. 1959, Journal of Applied Physics, vol. 30, No. 4, pp. 459-474.
Ebi Daisuke
Hanamoto Tadayuki
Hata Tadashi
Hayashi Kengo
Hiraishi Yoshinobu
Hiteshew Felisa
Komatsu Denshi Kinzoku Kabushiki Kaisha
Welsh & Katz Ltd.
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