Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-12-04
2007-12-04
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S086000
Reexamination Certificate
active
11136723
ABSTRACT:
An apparatus for pulling single crystal comprises a quartz crucible provided in a chamber for storing raw melt of a single crystal, a heater that heats the raw melt of the single crystal, and a crucible driving unit that rotates the quartz crucible. A quartz crucible deformation prevention unit using an arm or gas blowout is provided in the chamber, whereby deformation of a wall part of the quartz crucible during manufacture thereof can be prevented, and a deformed quartz crucible can be repaired.
REFERENCES:
patent: 64-076992 (1989-03-01), None
patent: 2000-007496 (2000-01-01), None
patent: 2001-261480 (2001-09-01), None
Hiteshew Felisa
Pillsbury Winthrop Shaw & Pittman LLP
Sumco Corporation
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