Apparatus for pulling silicon single crystal

Details Apparatus for pulling silicon single crystal Apparatus for pulling silicon single crystal

1997-05-23

1999-09-21

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117218, 117222, C30B 3500

Patent

active

059548754

ABSTRACT:
An apparatus for pulling silicon single crystal comprises a main apparatus body, a crucible disposed therein and comprised of a quartz crucible part and a crucible protection part, a heating member disposed at the outside of the crucible therearound, a temperature keeping cylindrical body disposed at the outside of the heating member, and a heat insulating material disposed between the temperature keeping cylindrical body and the main apparatus body, in which at least an inside upper region of the temperature keeping cylindrical body and/or the crucible protection part made from a carbonaceous material is covered with a thermally decomposed carbon film.

REFERENCES:
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5476679 (1995-12-01), Lewis et al.
patent: 5575847 (1996-11-01), Karamochi et al.
patent: 5578123 (1996-11-01), Vilzmann et al.
patent: 5707447 (1998-01-01), Schulmann et al.

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