Apparatus for pulling a single crystal

Details Apparatus for pulling a single crystal Apparatus for pulling a single crystal

2006-07-18

2006-07-18

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S030000, C117S035000, C117S218000

Reexamination Certificate

active

07077905

ABSTRACT:
An apparatus for pulling the single crystal has a radiation shield. The apparatus can improve the ratio of single crystallization, even if the radiation shield is made of graphite base material and covered with silicon carbide. The apparatus can be manufactured by low cost and can improve heat insulating characteristic. The apparatus does not generate cracks by heat stress even in a large size. In the apparatus for Czochralski method having the radiation shield, the radiation shield is formed of graphite base material covered with silicon carbide. An inside corner of a curvature formed on the base material is formed of a curved surface.

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patent: 6197111 (2001-03-01), Ferry et al.
patent: 6409833 (2002-06-01), Park
patent: 6527859 (2003-03-01), Lee et al.
patent: 6821344 (2004-11-01), Park
patent: 5-884 (1993-01-01), None
patent: 2000-119089 (2000-04-01), None

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