Apparatus for pulling a single crystal

Details Apparatus for pulling a single crystal Apparatus for pulling a single crystal

1999-08-11

2000-08-08

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117222, C30B 3500

Patent

active

060996412

ABSTRACT:
A method and apparatus for pulling a single crystal by, for example, the Czochralski method where a melt is heated by heaters arranged around, or around and below a crucible. Auxiliary heaters are provided above the crucible to directly heat the melt to supplement the heaters arranged around, or around and below the crucible, so asto reduce the power of the heaters arranged around, or around and below the crucible. According to the method, a single crystal is pulled under the condition of the local highest temperature of a quartz crucible of 1600.degree. C. or less.

REFERENCES:
patent: 4058429 (1977-11-01), Duncan et al.
patent: 4087313 (1978-05-01), Milstein
patent: 4421721 (1983-12-01), Byer et al.
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 5137699 (1992-08-01), Azad
patent: 5223077 (1993-06-01), Kaneko et al.

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