Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-04-08
2008-04-08
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185270, C365S185110
Reexamination Certificate
active
11312925
ABSTRACT:
Non-volatile storage elements are programmed in a manner that reduces program disturb by using modified pass voltages. In particular, during the programming of a selected storage element associated with a selected word line, a higher pass voltage is applied to word lines associated with previously programmed non-volatile storage elements in the set than to word lines associated with unprogrammed and/or partly programmed non-volatile storage elements in the set. The pass voltage is sufficiently high to balance the channel potentials on the source and drain sides of the selected word line and/or to reduce leakage of charge between the boosted channel regions. Optionally, an isolation region is formed between the boosted channel regions by applying a reduced voltage on one or more word lines between the selected word line and the word lines that receive the higher pass voltage.
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Office Action dated Mar. 23, 2007 in U.S. Appl. No. 11/313,023.
Hemink Gerrit Jan
Oowada Ken
Nguyen Tuan T.
Sandisk Corporation
Vierra Magen Marcus & DeNiro LLP
Yang Han
LandOfFree
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