Apparatus for programming a dynamic EPROM

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307468, 365 95, 365104, 365230, H03K 19173, H03K 19096, G11C 700, G11C 1140

Patent

active

042899826

ABSTRACT:
An insulated-gate field-effect-transistor (IGFET) quasi-static decoder for programming an electronically-programmable read-only memory (EPROM) applies to the floating gate of selected memory devices a programming voltage. Prior to selection, each row and column conductor of the memory is latched at a first voltage. Precharge circuitry responsive to a single precharge pulse establishes an enabling voltage for unlatching a selected row and column. The selected row and column is then coupled via a switch to a source of programming voltage.

REFERENCES:
patent: 4094012 (1978-06-01), Perlegos et al.
patent: 4110842 (1978-08-01), Sarkissian et al.

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