Apparatus for production of single crystal oxide films by liquid

Details Apparatus for production of single crystal oxide films by liquid Apparatus for production of single crystal oxide films by liquid

1995-04-06

1996-12-24

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 54, 117 58, 117202, C30B 3500

Patent

active

055870155

ABSTRACT:
An apparatus for production of single crystal oxide films by liquid-phase epitaxy comprises an insulating core tube with an external high frequency heating means, an electroconductive cylindrical member having openings at both ends and being arranged in the core tube, and a crucible made of an electroconductive material and coaxially arranged in the cylindrical member.

REFERENCES:
patent: 3647578 (1972-03-01), Barnett et al.
Applied Physics Letters, vol. 19, No. 11, Dec. 1971 pp. 486-488-Levinstein et al. "Growth of High Quality Garnet Thin Films from Supercooled Melts" p. 487, col. 2, line 10; Fig. 1 and p. 488, col. 1, lines 11-18.
Patent Abstracts Of Japan--vol. 4, No. 130 Sep. 12, 1980.
Journal of Crystal Growth, vol. 64, No. 2, Nov. 1984, pp. 275-284-Kalges et al. "LPE Growth of Bismuth Substituted Gadolinium Iron Garnet Layers: Systematization of Experimental Results"--Fig. 1.

Affiliated with

Also associated with

Rating

Apparatus for production of single crystal oxide films by liquid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for production of single crystal oxide films by liquid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for production of single crystal oxide films by liquid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1176249