Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1995-05-09
1996-08-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118725, 118726, C23C 1400
Patent
active
055429793
ABSTRACT:
A thin sulfide film can be formed by simultaneously generating under different conditions a plurality of deposition materials to be deposited on a substrate, using the fact that sulfur has a higher vapor pressure. Sulfur vapors can be generated in an external vessel (6) which is located outside the vacuum deposition vessel (1). The sulfur vapors can then be introduced into the vacuum deposition vessel (1) through a vapor inlet tube (7) to form a localized atmosphere of sulfur vapors within the vacuum deposition vessel (1) in the vicinity of the substrate which is positioned on a substrate holder (4). Chemical bonding, on the substrate, of the sulfur vapors and the vapors of other deposition materials generated from other deposition sources provided in the vacuum deposition vessel (1) form a thin film of high quality with good reproducibility. The vapor inlet tube (7) can project inwardly within the vacuum deposition vessel (1) with its outlet being positioned closely adjacent to the substrate so as to concentrate the sulfur vapors at the substrate. The vapor inlet tube (7) can be provided with a heater 11 to maintain the vapor state of the material passing therethrough.
REFERENCES:
patent: 4761300 (1988-08-01), Schachter
patent: 5004721 (1991-04-01), DeLozanne
Panish, J. Electrochemical Soc.: Solid State Science & Technol. Dec. 1980, pp. 2729-2733.
Parker, The Technology & Physics Of Molecular Beam Epitaxy. .COPYRGT.1985 Plenum Press, N.Y. p. 34.
Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice, .COPYRGT.1989 Academic Press, Inc. pp. 34-35 & 50-52. Bunshah, Deposition Technologies for Films & Coatings.
Matsuno Akira
Nire Takashi
Bueker Richard
Kabushiki Kaisha Komatsu Seisakusho
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