Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1995-06-07
1997-03-18
Garrett, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117222, C30B 3500
Patent
active
056118570
ABSTRACT:
A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
REFERENCES:
patent: 5248378 (1993-09-01), Oda et al.
patent: 5249378 (1993-09-01), Oda et al.
patent: 5435263 (1995-07-01), Akashi et al.
patent: 5437242 (1995-08-01), Hoffstetter et al.
Japanese Extended Abstracts (The 38th Spring Meeting, 1991); No. 1, The Japan Society of Applied Physics and Related Societies (Mar. 28-31, 1991), "Studies on Crystal Growing Conditions Concerning with Vox Failure," K. Kitagawa et al.
Japanese Extended Abstracts (The 39th Spring Meeting, 1992); No. 1, The Japan Society of Applied Physics and Related Societies (Mar. 28-31, 1992), "Influence of Thermal History in CZ Crystal Growth Process on Dielectric Strength of Gate Oxide Films," Y. Komatsu et al.
Akashi Yoshihiro
Ito Makoto
Kuramochi Kaoru
Okamoto Setsuo
Tsujimoto Yasuji
Garrett Felisa C.
Sumitomo Sitix Corporation
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