Apparatus for producing single crystals

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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422246, 136607, 136608, 1366171, 1366201, 1641322, C30B 3500, C30B 1522

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active

049449257

ABSTRACT:
A method of producing single crystals is characterized in that in withdrawing a semiconductor or dielectric material from its molten state while allowing it to grow into a single crystal solid, a die heated to a temperature higher than the solidifying point of the melt is disposed at the melt withdrawing outlet and the single crystal is withdrawn through the die.

REFERENCES:
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patent: 3291650 (1966-12-01), Dohmen et al.
patent: 3915656 (1975-10-01), Mlavsky et al.
patent: 3954551 (1976-05-01), Cecil et al.
patent: 3980438 (1976-09-01), Castonguay et al.
patent: 4196171 (1980-04-01), Watanabe et al.
patent: 4242589 (1980-12-01), Sachs
patent: 4269652 (1981-05-01), Yancey
patent: 4390505 (1983-06-01), Taylor et al.
Sachs, Dynamics and Control of Meniscus Height in Ribbon Growth by the EFG Method, Journal of Crystal Growth 50 (1980), pp. 114 to 125.

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