Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1995-04-14
1996-09-03
Garrett, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117217, C30B 3500
Patent
active
055519784
ABSTRACT:
An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.
REFERENCES:
patent: 2904512 (1959-09-01), Horn
patent: 4752451 (1988-06-01), Aubert et al.
patent: 4971652 (1990-11-01), Azad
patent: 5170061 (1992-12-01), Baba
Akashi Yoshihiro
Okamoto Setsuo
Takiuchi Kaoru
Garrett Felisa C.
Sumitomo Sitix Corporation
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