Apparatus for producing single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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Details

117208, 117217, C30B 3500

Patent

active

055519784

ABSTRACT:
An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.

REFERENCES:
patent: 2904512 (1959-09-01), Horn
patent: 4752451 (1988-06-01), Aubert et al.
patent: 4971652 (1990-11-01), Azad
patent: 5170061 (1992-12-01), Baba

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