Apparatus for producing single crystal

Details Apparatus for producing single crystal Apparatus for producing single crystal

1996-12-05

1999-05-04

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, 117206, 117216, C30B 3500

Patent

active

059000589

ABSTRACT:
An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum breaker. The structure prevents the sealing water in the bubbler from flowing backward, so that danger of steam explosion can be avoided.

REFERENCES:
patent: 5096677 (1992-03-01), Katsuoka et al.
patent: 5129986 (1992-07-01), Seki et al.
patent: 5365772 (1994-11-01), Ueda et al.
patent: 5667588 (1997-09-01), Iino et al.
"A Czochralski Silicon Growth Technique Which Reduces Carbon to the Order of 1014 per Cubic Centimeter", Fukuda, et al.; J of Electro Chemical Society; Aug. 1994; vol. 141, No. 8, pp. 2216-2220, Abstract only.

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