Apparatus for producing silicon single crystal

Details Apparatus for producing silicon single crystal Apparatus for producing silicon single crystal

1996-12-26

1999-02-16

Garrett, F. C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117218, C30B 3500

Patent

active

058715835

ABSTRACT:
An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to form a portion of the periphery of an ellipse drawn about two foci which are composed of the upper end of a heater and a point of the longitudinal axis of a silicon single crystal being grown. The inside surface has a low emissivity. With the apparatus thus constructed, a silicon single crystal having a high dielectric breakdown strength of oxide film (SiO.sub.2) can be produced in a stable manner with high yield and productivity.

REFERENCES:
patent: 4058699 (1977-11-01), Van Vloten
patent: 5186911 (1993-02-01), Min et al.
patent: 5248378 (1993-09-01), Oda et al.
Patent Abstracts of Japan, vol. 7, No. 118 (C-167) (1263) 21 May 1983 & JP-A-58 036 998 (Toshiba Ceramics K.K.) 4 Mar. 1983 *abstract*.

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