Apparatus for producing silicon single crystal

Details Apparatus for producing silicon single crystal Apparatus for producing silicon single crystal

1996-12-05

1998-06-16

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, C39B 3500

Patent

active

057663467

ABSTRACT:
An apparatus for producing a silicon single crystal by the MCZ method is disclosed in which electrodes and magnets are arranged so as to make such a condition that a line of magnetic force passing through the central axis of the crucible and a horizontal electric current which results from the supply of a direct current to the heater forms a counterclockwise angle of more than 0.degree. and less than 180.degree. on the basis of the condition where the direction of the line of magnetic force coincides with the direction of the horizontal electric current.

REFERENCES:
patent: 4830703 (1989-05-01), Matsutani
patent: 5196085 (1993-03-01), Szekely et al.
patent: 5306387 (1994-04-01), Fusegawa et al.
patent: 5571320 (1996-11-01), Grimes et al.
"Magnetic Field Breeds Skylab-Like Semiconductor", Electrons, Jul. 3, 1980, p. 83.

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