Apparatus for producing silicon single crystal

Details Apparatus for producing silicon single crystal Apparatus for producing silicon single crystal

1994-10-28

1995-12-05

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 13, 117213, C30B 3500

Patent

active

054719496

ABSTRACT:
A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.

REFERENCES:
patent: 4235848 (1980-11-01), Sokolov et al.
patent: 4350557 (1982-09-01), Scholl et al.
patent: 4609425 (1986-09-01), Mateika et al.
patent: 4894206 (1990-01-01), Yamashita et al.
Keigo Hoshikawa et al., "Low Oxygen Content Czochralski Silicon Crystal Growth", Japanese Journal of Applied Physics, vol. 19, No. 1, Jan. 1980, pp. L33-36.
T. Suzuko et al., "CZ Silicon Crystals Grown in a Transverse Magnetic Field", Sony Corp. Semiconductor Div. Japan 243, pp. 90-100.
"The Dissolution Rate of Silica in Molten Silicon" by Hiroshi Hirata et al., Japan Journal of Applied Physics, vol. 19, No. 8 (1980).

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