Apparatus for producing silicon single crystal

Details Apparatus for producing silicon single crystal Apparatus for producing silicon single crystal

1992-06-26

1993-11-09

Chaudhuri, Olik

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566171, 1566204, 156DIG64, B01D 900

Patent

active

052600378

ABSTRACT:
An apparatus and a method for producing a silicon single crystal by Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.

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patent: 5162072 (1992-11-01), Azad
T. Suzuki et al., "CZ Silicon Crystals Grown in a Transverse Magnetic Field," pp. 90-100.
Keigo Hoshikawa et al., "Low Oxygen Content Czochralski Silicon Crystal Growth," Japanese Journal of Applied Physics, vol. 19, No. 1, pp. L33-36. (Jan. 1980).

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