Apparatus for producing silicon carbide

Details Apparatus for producing silicon carbide Apparatus for producing silicon carbide

1979-03-09

1981-09-29

Smith, William F.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including heat exchanger for reaction chamber or reactants...

13 22, 219390, C01D 132, H05B 718

Patent

active

042922763

ABSTRACT:
An apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in Fig. 1 of the accompanying drawings.

REFERENCES:
patent: 2178773 (1939-11-01), Benner et al.
patent: 3343920 (1967-09-01), Lowe
patent: 3404210 (1968-10-01), Weber
patent: 3802847 (1974-04-01), Hara et al.
patent: 3804967 (1974-04-01), Werych
patent: 3933434 (1976-01-01), Matouich

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