Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1988-09-12
1990-08-28
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 118728, 118730, 4272555, C23C 1600
Patent
active
049516035
ABSTRACT:
Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while the substrates are heated from above the reaction chamber. Continuous treatment of the substrates is provided with an increase in reactant gas utilization efficiency. Disturbance of reactant gas flow by thermal convection is prevented and semiconductor layers having smooth surfaces are formed.
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Ohmori Yoshinori
Ohnishi Toshiharu
Yoshino Akira
Bueker Richard
Daidousanso Co. Ltd.
Owens Terry J.
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