Apparatus for producing semiconductors

Details Apparatus for producing semiconductors Apparatus for producing semiconductors

1989-12-26

1990-12-25

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Object embedded in particulate mass

118715, 118725, C23C 1646

Patent

active

049794655

ABSTRACT:
The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.
Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.
According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

REFERENCES:
patent: 3704987 (1972-12-01), Arndt
patent: 3717439 (1973-02-01), Sakai
patent: 4434742 (1984-03-01), Henaff
patent: 4508054 (1985-04-01), Baumberger
patent: 4751372 (1988-06-01), Fraas
patent: 4825809 (1989-05-01), Mieno
patent: 4838201 (1989-06-01), Fraas

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