Apparatus for producing semiconductor using aluminum nitride bod

Details Apparatus for producing semiconductor using aluminum nitride bod Apparatus for producing semiconductor using aluminum nitride bod

1997-09-02

1999-06-01

Marcantoni, Paul

Compositions: ceramic

Ceramic compositions

Refractory

501 96, 156345, 118723R, 118725, 20429801, 20429831, 219553, C04B 35581

Patent

active

059087994

ABSTRACT:
An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.

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