Apparatus for producing semiconductor thin films on moving...

Details Apparatus for producing semiconductor thin films on moving... Apparatus for producing semiconductor thin films on moving...

2005-10-04

2005-10-04

Hiteshew, Felisa C. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S060000, C117S061000

Reexamination Certificate

active

06951584

ABSTRACT:
An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

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