Apparatus for producing semiconductor thin films on moving...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth

Reexamination Certificate

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C117S060000, C117S061000

Reexamination Certificate

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06951584

ABSTRACT:
An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

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patent: 05-330984 (1993-12-01), None
Unagami et al., “Structure of Porous Silicon Layer and Heat-Treatment Effect”, J. Electrochem. Soc. V. 125, N. 8, 1339-1344 (1978).

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