Apparatus for producing semiconductor film

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 118728, 118730, C23C 1600

Patent

active

052521320

ABSTRACT:
A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.

REFERENCES:
patent: 4796562 (1989-01-01), Brors
patent: 4919077 (1990-04-01), Oda et al.
patent: 5033407 (1991-07-01), Mizuno
patent: 5063031 (1991-11-01), Sato
patent: 5108792 (1992-04-01), Anderson
Lassig et al., "Kinetics of Rapid Thermal Oxidation of Silicon", Materials Research Society, vol. 92, 1987, pp. 103-109.
Blake et al., "Slip Free Rapid Thermal Processing", Materials Research Society, vol. 92, 1987, pp. 265-273.
Moslehi et al., "Microwave Plasma LPCVD of Tungsten in a Gold-Wall Lamp-Heated Thermal Processor", Materials Research Society, vol. 92, 1987, pp. 295-303.

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