Apparatus for producing semiconductor device and method for prod

Details Apparatus for producing semiconductor device and method for prod Apparatus for producing semiconductor device and method for prod

1994-04-08

1995-04-18

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118719, 20429809, C23C 1600

Patent

active

054074851

ABSTRACT:
In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.

REFERENCES:
Rapid thermal processing systems: A review with emphasis on temperature control; F. Roozeboom; J. Vac. Sci. Technol. B 8(6), Nov./Dec. 1990; pp. 1249-1258.
Rapid isothermal processing; R. Singh; J. Appl. Phys. 63(8); 15 Apr. 1988; pp. R59-114.

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