Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-12-10
1998-12-15
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 19, 117224, C30B 3500
Patent
active
058490809
ABSTRACT:
A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible, heating to melt the raw semiconductor material in the crucible by heating means, solidifying the melted material while depriving the bottom of the crucible of heat, and then cooling the crucible to cool the solidified semiconductor, in an atmosphere inert to the semiconductor throughout, characterized by alternately subjecting the semiconductor crystal to growth and annealing in the solidification step while periodically varying the amount of heat liberated from the raw semiconductor material.
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patent: 4050905 (1977-09-01), Swinehart
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patent: 5714004 (1998-02-01), Okuno
"Convective Interference and `Effective Diffusion-Controlled Segregation during Directional Solidification under Stabilizing Vertical Thermal Gradients; Ge`" by D. Holmes et al., J. Electrochemical Society: Solid-State Science and Technology Feb. 1981 pp. 429-437.
Garrett Felisa
Sharp Kabushiki Kaisha
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