Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1993-07-29
1995-06-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118725, 118726, C23C 1424, C23C 1640
Patent
active
054218900
ABSTRACT:
Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.
REFERENCES:
patent: 4655167 (1987-04-01), Nakamura et al.
patent: 4763602 (1988-08-01), Madan et al.
patent: 5316585 (1994-05-01), Okamoto
Aida, Japanese Journal of Applied Physics, vol. 28, No. 4, Apr., 1989, pp. L635-L638.
"Properties of Reactively-Sputtered Copper Oxide Thin Films" by V. F. Drobny & D. L. Pulfrey, Thin Solid Films, 61(1979) pp. 89-98.
Hase Takashi
Kita Ryusuke
Morishita Tadataka
Sasaki Masato
Bueker Richard
International Superconductivity Technology Center
Kabushiki Kaisha Kobe Seiko Sho
Sharp Kabushiki Kaisha
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