Apparatus for producing monocrystals by the Verneuil technique

Chemistry: physical processes – Physical processes – Crystallization

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156615, B01J 1724

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active

040009777

ABSTRACT:
An apparatus for producing monocrystals having a relatively large cross-section by the Verneuil technique wherein a seed crystal is mounted on a movable crystal support member within a furnace means having a burner guiding flame gases and crystal growth material for impingement against the seed crystal so that the material melts and adheres to the seed crystal and forms a monocrystal which grows axially upwardly therefrom while the seed crystal member is moved axially downwardly a distance corresponding to the amount of axial crystal growth so that substantially uniform growth conditions are maintained throughout the growing process. A relatively massive flame deflector member having a central passage therein is positioned within a furnace means in spaced registry from the burner and radially about the crystal support member so as to deflect the flame gases laterally away from the growing crystal and to receive sufficient heat therefrom to form a heat reservoir for the growing crystal after flame shutdown. At least one axially movable insert member is positioned within the through passage of the deflector member and radially spaced from the crystal support member and the deflector member so as to be selectively movable in relation to the deflector member and the support member.

REFERENCES:
patent: 2792287 (1957-05-01), Moore, Jr. et al.
patent: 3012374 (1961-12-01), Merker
patent: 3282654 (1966-11-01), Hutcheson
patent: 3876382 (1975-04-01), Falckenberg

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