Coating apparatus – Gas or vapor deposition – With treating means
Patent
1992-07-08
1993-08-03
Hearn, Brian E.
Coating apparatus
Gas or vapor deposition
With treating means
118725, 118712, C23C 1650
Patent
active
052325091
ABSTRACT:
The present invention relates to an apparatus for producing low resistivity tungsten thin films by a plasma enhanced chemical vapor deposition (PECVD) system. The structure of the invented system comprises the conventional PECVD reactor in which diffuser/electrode and hot plate heated by the hot wire and an apparatus to measure the exact surface temperature of monitoring silicon wafers. In order to control the tungsten deposition temperature exactly, two thermocouples encapsulated within the isolation tube extended to common ground outside the reactor to eliminate rf noise, are inserted into the small cavities made on two monitoring wafers, which ar placed in the surface of hot plate. Using the above mentioned system, the present invention is effective to measure and control the exact surface temperature of the silicon substrate; one of the major factors to produce low resistivity tungsten thin films.
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Kim Yong T.
Min Suk-ki
Baskin Jonathan D.
Hearn Brian E.
Korea Institute of Science and Technology
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