Apparatus for producing group-III nitride semiconductor...

Details Apparatus for producing group-III nitride semiconductor... Apparatus for producing group-III nitride semiconductor...

2011-01-11

2011-01-11

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S485000, C438S767000

Reexamination Certificate

active

07867801

ABSTRACT:
An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof.

REFERENCES:
patent: 7738524 (2010-06-01), Ochiai et al.
Yukiko, Ushiku, et al.; “21st seiki rengo symposium ronbunshyu”; vol. 2; 2003; pp. 295-298.

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