Coating apparatus – Gas or vapor deposition
Patent
1993-10-04
1996-03-05
Chaudhuri, Olik
Coating apparatus
Gas or vapor deposition
C23C 1600
Patent
active
054964083
ABSTRACT:
An apparatus for producing a compound semiconductor layer includes a first flow rate controller for adjusting flow rates of respective material source gases, a gas mixing pipe for mixing the respective material source gases, gas distributing pipes for distributing gases and connected to the gas mixing pipe, a second flow rate controller for adjusting flow rates of the material source gases flowing through the gas distributing pipes and for supplying the material source gases to a reaction tube, a pressure detector for detecting pressure in the gas mixing pipe, and a third controller responsive to the pressure detector for controlling the second flow rate controller to maintain a constant pressure in the gas mixing pipe. Retardation of the gases between the first and second flow rate controllers is avoided, improving thickness uniformity in grown layers.
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Kageyama Shigeki
Kaneno Nobuaki
Karakida Shoichi
Motoda Takashi
Chaudhuri Olik
Dutton Brian K.
Mitsubishi Denki & Kabushiki Kaisha
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