Apparatus for producing a silicon single crystal by a float-zone

Details Apparatus for producing a silicon single crystal by a float-zone Apparatus for producing a silicon single crystal by a float-zone

1996-04-23

1997-11-18

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 49, 117 51, 117 52, C30B 3500

Patent

active

056883218

ABSTRACT:
A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described. The growing single crystal ingot is post-heated by a heat reflector near the molten zone.

REFERENCES:
patent: 5089082 (1992-02-01), Dreier et al.
patent: 5114528 (1992-05-01), Kou
Japanese Abstract No. 63-274685, "Device For Producing Single Crystal By Infrared Heating", Nov. 11, 1988.
2300 Journal of Crystal Growth 128 (1993) pp. 282-287, Mar. I, Nos. 1/4, Amsterdam, NL, "Facet formation in silicon single crystals grown by VMFZ method," M. Kimura et al.

Affiliated with

Also associated with

Rating

Apparatus for producing a silicon single crystal by a float-zone does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for producing a silicon single crystal by a float-zone, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for producing a silicon single crystal by a float-zone will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1562475