Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1993-08-26
1994-08-16
Hearn, Brian E.
Coating apparatus
Gas or vapor deposition
Multizone chamber
118723ER, 118725, 118730, C23C 1600, C23C 1646, C23C 1650
Patent
active
053383621
ABSTRACT:
An apparatus for forming a CVD film on semiconductor wafers includes a process chamber in which a rotary table capable of loading five wafers is provided. The interior of the process chamber is divided into six compartments by radially arranged partitions. The compartments comprise a wafer exchanging room for loading and unloading wafers, a first process room for forming a silicon film on the wafers, a second process room for oxidizing the silicon film into silicon oxide film and three exhaust rooms provided between the wafer exchanging room, the first process room and the second process room. The wafers are processed on the continuously rotating table. As the table is rotated, the wafers are processed in the first and second process rooms and unnecessary products produced in them are successively removed in the exhaust rooms.
REFERENCES:
patent: 4951603 (1990-08-01), Yoshino et al.
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 4987856 (1991-01-01), Hey et al.
patent: 5201994 (1993-04-01), Nonaka et al.
patent: 5261959 (1993-11-01), Gasworth
patent: 5281274 (1994-01-01), Yoder
Baskin Jonathan D.
Hearn Brian E.
Tokyo Electron Limited
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