Apparatus for preparing a single crystal of silicon

Details Apparatus for preparing a single crystal of silicon Apparatus for preparing a single crystal of silicon

1996-04-17

1998-10-06

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

117 15, 117 28, 117 30, 117202, 117900, C30B 3500

Patent

active

058171762

ABSTRACT:
The present invention relates to an apparatus for preparing a single crystal of silicon by which a high-quality single crystal of silicon can be prepared by changing the rotation rate of a crucible or a seed and a process for preparing a single crystal of silicon thereby. As compared with a conventional apparatus employing Czochralski method, which comprises a rotating axis of seed, a seed, a crucible, a heater, a rotary axis of crucible, a chamber and an adiabatic layer, the apparatus of the present invention is characterized by the improvement comprising means for controlling the rotation rate of the crucible or the seed, each of which consists of a D.C. voltage, a function generator, a voltage summing circuit and a stepping motor.

REFERENCES:
patent: 4565671 (1986-01-01), Matsutani et al.
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 4622211 (1986-11-01), Suzuki et al.
W.E. Langlois, Buoyancy-Driven Flows in Crystal-Growth Melts, Ann. Rev. Fluid Mech, 17:191-215 (1985).
Hyung-Jin Sung et al., Prediction of Transient Oscillating Flow in Czochralski Convection, Int. J. Heat Mass Transfer, 38(9):1627-1636 (1995).
H.J. Scheel et al., Crystal Pulling Using Acrt, Journal of Crystal Growth, 49:291-296 (1980).
M. Mihelcic et al., Numerical Simulation of Forced Convection in the Classical Czochralski Method, in Acrt and Cacrt, Journal of Crystal Growth, 53:337-354 (1981).
I.H. Brunskill et al., High-Temperature Solution Growth of Pb(Fe.sub.0.5 Nb.sub.0.5) O.sub.3 and Pb(Mn.sub.0.5 Nb.sub.0.5) O.sub.3 Crystals, Journal of Crystal Growth, 56:541-546 (1982).
M. Mihelcic et al., Numerical Simulation of Free and Forced Convection in the Classical Czochralski Method and in Cacrt, Journal of Crystal Growth, 57:300-317 (1982).
D. Rytz et al., Crystal Growth of KTa.sub.1-x Nb.sub.x O.sub.3 (0<X.ltoreq.0.04) Solid Solutions by a Slow-Cooling Method, Journal of Crystal Growth 59:468-484 (1982).
A. Horowitz et al., Bridgman Growth of Rb.sub.2 MnCl.sub.4 via Accelerated Crucible Rotation Technique, Journal of Crystal Growth, 61:323-328 (1983).
H.J. Scheel et al., Crystal Growth and Characterization of "Striation-Free" KTa.sub.1-x Nb.sub.x O.sub.3 (X.congruent.0.26) Solid Solutions, Journal of Crystal Growth, 62:291-298 (1983).
E. Kuroda et al., The Effect of Temperature Oscillations at the Growth Interface on Crystal Perfection, Journal of Crystal Growth, 68:613-623 (1984).
T. Munakata et al., Onset of Oscillatory Flow in a Czochralski Growth Melt and Its Suppression by Magnetic Field, Journal of Crystal Growth, 106:566-576 (1990).
H. Ozoe et al., Transition Mechanism of Flow Modes in Czochralski Convection, Journal of Crystal Growth, 110:472-480 (1991).
R.W. Series et al., The Use of Magnetic Fields in Semiconductor Crystal Growth, Journal of Crystal Growth, 113:305-328 (1991).
Yi-Bin Xu et al., Accelerated Crucible Rotation Technique: Bridgman Growth of Li.sub.2 B.sub.4 O.sub.7 Single Crystal and Simulation of the Flows in the Crucible, Journal of Crystal Growth, 133:95-100 (1993).

Affiliated with

Also associated with

Rating

Apparatus for preparing a single crystal of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for preparing a single crystal of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for preparing a single crystal of silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-73731