Apparatus for positively doping semiconductor crystals during zo

Details Apparatus for positively doping semiconductor crystals during zo Apparatus for positively doping semiconductor crystals during zo

1974-07-11

1976-05-04

Bascomb, Jr., Wilbur L.

Chemistry: physical processes

Physical processes

Crystallization

156605, 156620, 13DIG1, B01J 1710

Patent

active

039544168

ABSTRACT:
A method and apparatus for positively introducing dopants into semiconductor crystals via crucible-free zone melting whereby a polycrystalline rod is mounted at opposite ends thereof in a housing which includes an annular induction heating coil surrounding a section of the rod for producing a melt zone at such section and a thin dopant source rod having a predetermined amount of dopant therein is controllably fed into the melt zone so that a positively determinable amount of dopant is provided in the recrystallized rod.

REFERENCES:
patent: 2851341 (1958-09-01), Weiss
patent: 2904512 (1959-09-01), Horn
patent: 3494742 (1970-02-01), Kuba
patent: 3607109 (1971-09-01), Capita

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