Apparatus for plasma chemical vapor deposition

Details Apparatus for plasma chemical vapor deposition Apparatus for plasma chemical vapor deposition

1985-06-03

1986-12-02

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118725, 118 501, H01L 2120, C23C 1308

Patent

active

046256784

ABSTRACT:
A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.

REFERENCES:
patent: 3294059 (1966-12-01), Baines et al.
patent: 3843392 (1974-10-01), Sterling et al.
patent: 3850679 (1974-11-01), Sopko et al.
patent: 3893876 (1975-07-01), Akai et al.
patent: 4436770 (1984-03-01), Nishizawa et al.
patent: 4438154 (1984-03-01), Kato et al.
patent: 4446168 (1984-05-01), Kato et al.

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