Apparatus for planarizing a dielectric formed over a semiconduct

Abrasive tool making process – material – or composition – With carbohydrate or reaction product thereof

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51129131.3, 511314, 51322, B24B 2902

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active

051271966

ABSTRACT:
An improved method for planarizing the surface of an dielectric deposited over a semiconductor substrate. The substrate is pressed face down against a table which has been coated with an abrasive material. In this way, the upper surface of the interlayer dielectric contacts the abrasive. Rotational movement of the wafer relative to the table facilitates removal of the protruding portions of the interlayer dielectric by the abrasive. Post-planarization step height variation is minimized by simultaneously cooling the table and the abrasive material during the abrasive or polishing process. By maintaining the table and the abrasive at about 10 degrees Celcius the step height variation is reduced by a factor of 2 over that normally realized in the prior art.

REFERENCES:
patent: 4313284 (1982-02-01), Walsh
patent: 4450652 (1984-05-01), Walsh
patent: 4918869 (1990-04-01), Kitta
patent: 5036015 (1991-07-01), Sandhu

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