Coating apparatus – Gas or vapor deposition – Multizone chamber
Reexamination Certificate
2001-02-20
2004-06-22
Hassanzadeh, Parviz (Department: 1763)
Coating apparatus
Gas or vapor deposition
Multizone chamber
C118S715000, C118S725000
Reexamination Certificate
active
06752874
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a semiconductor fabrication; and, more particularly, to an apparatus for an ultra vacuum chemical vapor deposition and an epitaxial layer growing method therefor, in which a single crystal semiconductor thin film based on a high quality can be prominently grown in a manufacturing nature.
PRIOR ART OF THE INVENTION
In a complementary metal oxide semiconductor (CMOS) technique, it has been recently further developed a device based on a minimum of feature of 0.13 &mgr;m and a memory capacity of 1 giga (G). By such consecutive technique development, it is anticipated to embody the minimum of feature of 0.035 &mgr;m and an integration degree of 10
10
cm
−2
in 2012. Further, it is being diversely progressed an endeavor to embody a system-on-chip by improving a function of the CMOS, to thus promote an actual use for a BiCMOS having an addition of SiGe HBT.
However, there is a limitation in reducing the integration degree of the device by using a capability of controlling a reproducibility and a uniformity in a conventional semiconductor manufacturing technique, therefore, it is needed a development for a next-generation semiconductor technique to overcome such limitation. Particularly, in a growth technique of a semiconductor epitaxial layer, most fundamental and decidable method is provided to overcome such limitations.
In the growth technique of the conventional epitaxial layer, there are a gas-source molecular beam epitaxy (GSMBE) method, a rapid thermal chemical vapor deposition (RTCVD) method, a low pressure chemical vapor deposition (LPCVD) method, and a horizontal type ultra high vacuum vapor deposition (UHV-CVD) etc.
The gas source molecular beam epitaxy (hereinafter, referred to as “GSMBE”) using a gas source has been being used most frequently in a research institute, and this technique provides a growth characteristic of an epitaxial layer prominent in an interfacial abruptness under a pressure of 600° C. and 1.4×10
−4
Torr. But, the GSMBE is unstable in using the source, causes a ge-segregation of germanium, makes a cost and usage expenses high, and has a low throughput thus its productivity is shortage, therefore there is a limitation that it is difficult to be applied to a producing technique.
The RTCVD of
FIG. 1
in a conventional another technique relates to a viscous laminar flow, in other words, is valid to perform a growth under a pressure of 6 Torr, and has a growth function by maintaining the flow with hydrogen gas in a cold-wall reactor
3
having an installment of a single wafer
1
and a cooling plate
2
, and matches temperature and changes reaction gas. Thereby, the RTCVD has a growth function. That is, a growth process is simple and its usage is various, but reproducibility important in a growth of the epitaxial layer rapidly performing a temperature control is insufficient therein, and it is not open used owing to a shortcoming of representing a loading efficiency.
Subsequently, as shown in
FIG. 2
, the LPCVD controls a leak rate as 1 mTorr/min and controls a growth rate as 0.4~4 nm/min. Since this LPCVD is a low pressure, it is convenient to manufacture or use the device, thus this device has been used most much in order for a polycrystal thin film of silicon or a vapor deposition of an insulation film such as an oxide film or a nitride film. However, it is lack in a function of cutting off oxide or moisture injected from the neighborhood of a chamber
3
. In other words, in order to deposit a thin film based on a high purity, it is needed to execute a purge with hydrogen gas for a long time, and an epitaxial layer based on a lower quality is grown in comparison with the technique obtaining the growth in a high-vacuum chamber. Herewith, an unexplained reference number ‘2’ indicates the cooling plate.
The horizontal type UHV-CVD shown in
FIG. 3
is for an apparatus and method for growing a single-crystal silicon epitaxy by several sheets in an isothermal chamber
4
of a how wall, and has growth temperature below 800° C., and restricts a growth rate by non-plain power. By the silicon gas within the isothermal chamber, a uniform growth of an epitaxial layer is gained on a wafer
1
of several sheets, and an ultra-high vacuum of 10
−10
torr is supported before a start of the growth, and the silicon epitaxial layer is defined as a very keen region at the moment when the silicon epitaxial layer grows. Therefore, the epitaxial layer under 500 defects per a unit area cm
2
can grow. Such horizontal type ultra-high vacuum growing device is simple in its manufacture since the wafer can be transferred horizontally, but there is a serious shortcoming of accumulating the vapor deposition in the growth chamber and of a systematic footprint.
It is anticipated that the Moore laws will become relieved in an aspect of incline from a start point of about 2010 year provided under about 100 nm, since an added value of the integration reaches some limitation. Also, according that a structure and a function not used at the past are strengthened in the silicon semiconductor, the integration is gained in a radio frequency (RF) functional device or an optical functional device, to thus obtain the system-on-chip and remarkably heighten a cost and a performance of a semiconductor chip. In its concerning problems, a management for electric power through a low power operation and a curtailment for a manufacturing cost of the semiconductor etc. are proposed, and it will be mainly provided a research to overcome such technical difficulties as a development of a process technique through a development start of a device structure under 100 nm in the minimum of feature from around 2003 year, a new physical field for a quantization effect and an uncertain current flow, an excessive electricity consumption, a complication of a design and a tunneling.
For instances, in a modulation FET (MODFET), a characteristic of a high-speed operation is improved by generally heightening a movement extent of a transferor, leakage current is small, and a nonlinear operation characteristic caused in a single channel is improved, therefore there were much research. However, in a case of SiGe-MODFET, there still is a serious problem in a commercial use thereof.
An application of SiGe semiconductor was initially proposed by Herbert Kroemer in 1957, and SiGe low-temperature growth applicable to a device was initially proposed by Meyerson of IBM in 1981. But, an actually operating SiGe HBT was published by Meyerson in 1987 by completely satisfying a characteristic of the device through a growth of the epitaxial layer. According to such technical advance, a research for the SiGe was rapidly increased. SiGe-HBT f
t
=75 GHz (IBM) is published in 1990, SiGe BICMOS in 1992, and SiGe-HBT f
t
=100 GHz in 1994, through a renewal of a record in order. Also the IBM announced a commercial use of SiGe HBT on 8-inch wafers in 1994. In 1998, not only the IBM but also several companies such as TEMIC, SGS Thompson, and Maxim etc. had initially provided an LNA, a Mixer, a power amplifier, and a VCO etc.
The most important one to realize the device of SiGe and improve it with a prominent characteristic was depended upon a technical achievement in the SiGe epitaxial layer growth. A grid discordance between Si and Ge is severe as 4.2%, thus there is a limitation in its usage, since a threshold thickness is 80~100 nm when X
Ge
is 8~12% and the threshold thickness is 40~50 nm when X
Ge
is 16~24%. Further, when a growth condition is not appropriate, a thermal shock is provided, or an impurity substance exists on the surface of a wafer, a large amount of defect is caused easily. In a merit point in using the SiGe, the SiGe layer receives a pressure stress to degenerate a band and thus heighten a movement degree of a transferor, it is applicable to a light receiving element by controlling energy gap energy Eg by 0.66~1.12 eV, and a band gap discordance mainly exists on a valence band in an n-p-n structure of a bipolar element to there
Kang Jin-Yeoung
Kim Hong-Seung
Lee Seung-Yun
Shim Kyu-Hwan
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Hassanzadeh Parviz
Moore Karla
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