Apparatus for performing solution growth relying on temperature

Details Apparatus for performing solution growth relying on temperature Apparatus for performing solution growth relying on temperature

1983-02-28

1986-01-21

Smith, John D.

Coating apparatus

Immersion or work-confined pool type

Work-confined pool

118415, 118425, H01L 21208

Patent

active

045651566

ABSTRACT:
A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature and on a mass production scale without deranging the control of the growth temperature applied externally of the growth apparatus and with the application of only a small heating power and only a small cooling power, by enhancing the thermal exchange efficiency through the provision of heating means, via an insulator, for the melt-containing reservoir provided on the growth boat housed within a quartz reactor and by the provision of cooling means at the bottom of the boat within the reactor.

REFERENCES:
patent: 3648654 (1972-03-01), Bergh
patent: 3839991 (1974-10-01), Winstel et al.
patent: 4026735 (1977-05-01), Kamath et al.
patent: 4315796 (1982-02-01), Nishizawa
patent: 4347097 (1982-08-01), Nishizawa
patent: 4359012 (1982-11-01), Nishizawa
patent: 4401487 (1983-08-01), Lockwood
Western Electric, "Method for Reducing LPE-Edge Growth", by D. L. Rode, Technical Digest, No. 46, Apr. 1977, pp. 29 and 30.
Jun-ichi Nishizawa et al, Liquid Phase Epitaxy of GaP by a Temperature Difference Method Under Controlled Vapor Pressure, IEEE Transactions on Electron Devices, vol. ED-22, No. 9, Sep. 1975, pp. 716 to 721.
J. Nishizawa et al, Nearly Perfect Crystal Growth of III-V Compounds by the Temperature . . . , Journal of Crystal Growth 31, 1975, pp. 215 to 222.

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