Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction
Patent
1989-05-09
1990-03-20
Doll, John
Chemical apparatus and process disinfecting, deodorizing, preser
Chemical reactor
Including specific material of construction
C30B 3500
Patent
active
049099981
ABSTRACT:
In performing a solution growth of a Group II-VI compound semiconductor crystal by relying on the temperature difference technique under controlled vapor pressure on a solution growth apparatus having a recrystallizing zone, a source crystal supply zone and a vapor pressure controlling zone enclosed in a growth quartz tube and placed under different temperatures for the respective zones, wherein a heat sink is provided at the bottom end portion of the recrystallizing zone to cause a thermal flow to pass therethrough to the outside of the whole apparatus to insure that a single crystal will grow from this bottom end portion of the zone. The quartz tube may be enclosed in a pressure-resistant tube to apply a pressure to the growth quartz tube externally thereof to avoid its destruction to enable the growth to be performed at a high temperature to obtain a high growth rate. Thus, a large size crystal having a good crystal perfection can be grown.
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patent: 3690846 (1972-09-01), Akai et al.
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patent: 4264406 (1981-04-01), Haeskayle
patent: 4315796 (1982-02-01), Nishizawa
Gilman, J. J., "The Art and Science of Growing Crystals", Wiley & Sons, 1963, pp. 152-162.
Bird et al.; Transport Phenomena; John Wiley & Sons, New York, 1960; pp. 283-288.
Breneman R. Bruce
Doll John
Zaidan Hojin Handotai Kenkyu Shinkokai
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