Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-04-29
1997-02-11
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723MP, 118723FI, C23C 1600
Patent
active
056016530
ABSTRACT:
A plasma processing apparatus for performing plasma process on a semiconductor or the like draws an electron beam from an electron source plasma and, after acceleration, introduces the electron beam into a reaction chamber where a requisite gas is supplied for performing plasma process on the semiconductor wafer. At least one pair of magnets are provided in the chamber with an electron beam path created therebetween. The electron beam is formed into a sheet-like configuration through a magnetic field created by the at least one pair of magnets. The at least one pair of magnets are positioned in an opposed relation to allow the semiconductor wafer to be subjected at a uniform rate to plasma process.
REFERENCES:
patent: 5397956 (1995-03-01), Araki et al.
patent: 5413663 (1995-05-01), Shimizu et al.
"Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source", Matsuo et al., Japanese Journal of Applied Physics, 21(1):L4-L6 (1982).
"Reactive Ion Beam Etching of SiO.sub.2 and Poly-Si Empolying C.sub.2 F.sub.6, SiF.sub.4 and BF.sub.3 Gases", Okano et al., Japanese Journal of Applied Physics, 21(5):696-701 (1982).
"New high current low energy ion source", Hara et al., J. Vac. Sci. Technol., B5(1):366-368 (1987).
"High-rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma system", Yu et al., J. Vac. Sci. Technol., B6(6):1626-1631 (1988).
Breneman R. Bruce
Chang Joni Y.
Kabushiki Kaisha Toshiba
LandOfFree
Apparatus for performing plasma process on semiconductor wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for performing plasma process on semiconductor wafers , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for performing plasma process on semiconductor wafers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-338731