Apparatus for performing in-situ etch of CVD chamber

Details Apparatus for performing in-situ etch of CVD chamber Apparatus for performing in-situ etch of CVD chamber

1991-12-12

1993-05-18

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118715, 118724, 118723, H01L 2100

Patent

active

052117960

ABSTRACT:
Walls of a CVD chamber are automatically controlled to be heated to above 65.degree. C. during etching of the chamber walls with NF.sub.3. Any condensation of reaction products on the chamber walls is avoided, since, at the relatively high chamber wall temperature, these reaction products are volatile and are purged away with the NF.sub.3. The apparatus is programmed to automatically carry out this heating and gas injecting process.

REFERENCES:
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patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4653428 (1987-03-01), Wilson et al.
patent: 4709655 (1987-12-01), Van Mastrigt
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4795880 (1989-01-01), Hayes et al.
patent: 4811684 (1989-03-01), Tashiro et al.
patent: 4816113 (1989-03-01), Yamazaki
"Perry's Hand Book of Chemical Engineering", 5th ed., pp. 3-20, .COPYRGT.1973, Isbno-07-049478-9.

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